Displacement damage dose used for analyzing electron irradiation-induced degradation of GaInP/GaAs/Ge space solar cells  

作　　者：WANG Rong LU Ming LIU YunHong FENG Zhao 

机构地区：[1]Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,Beijing Normal University,Beijing 100875,China [2]College of Nuclear Science and Technology,Beijing Normal University,Beijing 100875,China [3]Beijing Radiation Center,Beijing 100875,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2011年第S2期296-299,共4页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 10675023 and 11075018);the Fundamental Research Funds for the Central Universities

摘　　要：Displacement damage dose (Dd) approach was applied to analyze the electron irradiation-induced degradation of GaInP/ GaAs/Ge space solar cells by effective 1 MeV electron Dd, the electron irradiation-induced maximum power Pmax degradation of the solar cells is plotted as a function of the effective 1 MeV electron Dd , and the result shows that all the measured electron data can be represented by a single curve using displacement damage dose. Obviously, the displacement damage dose approach simplifies the description of electron irradiation-induced degradation of GaInP/GaAs/Ge space solar cells, and also offers an alternative for handling the case where degradation occurs as a result of combined electron and proton irradiation.Displacement damage dose (Dd) approach was applied to analyze the electron irradiation-induced degradation of GaInP/ GaAs/Ge space solar cells by effective 1 MeV electron Dd, the electron irradiation-induced maximum power Pmax degradation of the solar cells is plotted as a function of the effective 1 MeV electron Dd , and the result shows that all the measured electron data can be represented by a single curve using displacement damage dose. Obviously, the displacement damage dose approach simplifies the description of electron irradiation-induced degradation of GaInP/GaAs/Ge space solar cells, and also offers an alternative for handling the case where degradation occurs as a result of combined electron and proton irradiation.

关 键 词：GaInP/GaAs/Ge solar cells DISPLACEMENT damage DOSE non-ionizing energy LOSS ELECTRON IRRADIATION 

分 类 号：N[自然科学总论]