Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis  

作　　者：HUANG TianMao CHEN NuoFu ZHANG XingWang BAI YiMing YIN ZhiGang SHI HuiWei ZHANG Han WANG Yu WANG YanShuo YANG XiaoLi 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]School of Renewable Energy,North China Electric Power University,Beijing 102206,China [3]State Key Lab of Silicon Materials,Zhejiang University,Hangzhou 310027,China

出　　处：《Science China(Technological Sciences)》2010年第11期3002-3005,共4页中国科学(技术科学英文版)

基　　金：supported by the National Basic Research Program of China ("973" Project) (Grant No 2010CB933803);the National Natural Science Foundation of China (Grant No 2102042);the Visiting Scholar Foundation of State Key Lab of Silicon Materials, Zhejiang Uni-versity ( Grant No SKL 2009-12)

摘　　要：A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between γ-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of γ-Al2O3, which was formed at the early stage of annealing.A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between γ-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of γ-Al2O3, which was formed at the early stage of annealing.

关 键 词：polycrystalline silicon thin film aluminum induced crystallization (111)preferred orientation 

分 类 号：O484.1[理学—固体物理]