Study on the SiN_x/Al rear reflectance performance of crystalline silicon solar cells  

作　　者：LIANG ZongCun, CHEN DaMing, ZHU YanBin & SHEN Hui Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China 

出　　处：《Science China(Technological Sciences)》2010年第12期3209-3213,共5页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 60876044);the Scientific and Technological Key Research Projects of Guangdong Province (Grant No. 2007A010700002)

摘　　要：The performance of internal rear surface reflectance of crystalline silicon solar cells is becoming more and more important with the decrease of thickness of the silicon wafers. In this paper PC1D was used to simulate the correlations between the rear surface reflectance and the electrical as well as optical properties of the solar cells. The results showed that the short circuit current, open circuit voltage and quantum efficiency were all enhanced with the increase of the rear reflectance. When the rear reflectance increased from 60% to 100%, the short circuit current, open circuit voltage and maximum output power were improved by about 0.128 A, 0.007 V, and 0.066 W, respectively. The internal quantum efficiency was improved by 39.9%, the external quantum increased by 17.4%, and the efficiency of the solar cells was enhanced by 0.4% at 1100 nm wavelength. The screen-printing was selected to prepare SiNx/Al reflector, and experimental results showed that the SiNx/Al reflector has desired characteristic of internal rear reflectance, with the reflectivity of 15% higher than that of conventional aluminum BSF at 1100 nm wavelength.The performance of internal rear surface reflectance of crystalline silicon solar cells is becoming more and more important with the decrease of thickness of the silicon wafers. In this paper PC1D was used to simulate the correlations between the rear surface reflectance and the electrical as well as optical properties of the solar cells. The results showed that the short circuit current, open circuit voltage and quantum efficiency were all enhanced with the increase of the rear reflectance. When the rear reflectance increased from 60% to 100%, the short circuit current, open circuit voltage and maximum output power were improved by about 0.128 A, 0.007 V, and 0.066 W, respectively. The internal quantum efficiency was improved by 39.9%, the external quantum increased by 17.4%, and the efficiency of the solar cells was enhanced by 0.4% at 1100 nm wavelength. The screen-printing was selected to prepare SiNx/Al reflector, and experimental results showed that the SiNx/Al reflector has desired characteristic of internal rear reflectance, with the reflectivity of 15% higher than that of conventional aluminum BSF at 1100 nm wavelength.

关 键 词：CRYSTALLINE silicon SOLAR CELLS REAR reflectance PC1D simulation REAR REFLECTOR 

分 类 号：TM914.4[电气工程—电力电子与电力传动]