Effects of temperature and pressure on the structural and optical properties of ZnO films grown by pulsed laser deposition  

作　　者：ZHAO Lei, XU ChangShan, LIU YuXue & LIU YiChun Center for Advanced Opto-Electronic Functional Materials Research, Northeast Normal University, Changchun 130024, China 

出　　处：《Science China(Technological Sciences)》2010年第2期317-321,共5页中国科学（技术科学英文版）

基　　金：supported by the National High-Tech Research and Development Program of China ("863" Project)(Grant No. 2006AA03Z311);the National Natural Science Foundation of China (Grant No. 60576040);the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 704017);the Jilin Provin-cial Science and Technology Development Project (Grant No. 20060507)

摘　　要：ZnO thin films were deposited on fused silica via pulsed laser deposition (PLD) at substrate temperatures from 300°C to 800°C and ambient oxygen pressures ranging from 10-2 mTorr to 240 mTorr. X-ray diffraction (XRD) and Raman spectra indicated that wurtzite ZnO was obtained in all cases. The highly c-oriented ZnO films were obtained for oxygen pressures above 11 mTorr. The room-temperature photoluminescence (PL) spectra demonstrated that all the films exhibited strong near-band-edge (NBE) emission, while deep-level (DL) emission was also observed in films deposited at oxygen pressures below 80 mTorr. From analysis of the XRD, Raman and photoluminescence PL data, an optimal condition was identified for the deposition of highly crystallized ZnO films.ZnO thin films were deposited on fused silica via pulsed laser deposition (PLD) at substrate temperatures from 300°C to 800°C and ambient oxygen pressures ranging from 10-2 mTorr to 240 mTorr. X-ray diffraction (XRD) and Raman spectra indicated that wurtzite ZnO was obtained in all cases. The highly c-oriented ZnO films were obtained for oxygen pressures above 11 mTorr. The room-temperature photoluminescence (PL) spectra demonstrated that all the films exhibited strong near-band-edge (NBE) emission, while deep-level (DL) emission was also observed in films deposited at oxygen pressures below 80 mTorr. From analysis of the XRD, Raman and photoluminescence PL data, an optimal condition was identified for the deposition of highly crystallized ZnO films.

关 键 词：ZINC OXIDE film PULSED laser DEPOSITION optical properties 

分 类 号：TN304.21[电子电信—物理电子学]