Electrical characteristics of Pt-ZnO Schottky nano-contact  

作　　者：SHAO ZhengZheng , ZHANG XueAo, WANG XiaoFeng & CHANG ShengLi Center of Materials Science, College of Science, National University of Defense Technology, Changsha 410073, China 

出　　处：《Science China(Physics,Mechanics & Astronomy)》2010年第1期64-67,共4页中国科学：物理学、力学、天文学（英文版）

基　　金：Supported by the National High Technology Research and Development Program of China (Grant No. 2009AA01Z114);the Advanced Research Foundation of National University of Defense Technology (Grant No.JC08-02-08)

摘　　要：The electrical characteristics of Pt-ZnO Schottky nano-contact have been studied. Well aligned ZnO nanorod arrays were synthesized by two-step wet-chemical method. A Pt-coated conducting probe of atomic force microscope was placed on the head face of the ZnO nanorod, thereby forming a Pt-ZnO nano-contact. The I-V characteristic curve shows that the Pt-ZnO nano-contact exhibits rectifying effect, like a Schottky diode with an ideality factor of 3.2 and a reverse-bias breakdown voltage more than -10 V. The study suggests that a high electric field is induced on the ZnO beneath the contact point when a bias voltage is applied, hence, the Schottky barrier thickness is decreased, and results in easier tunneling across the Pt-ZnO interface and a large ideality factor.The electrical characteristics of Pt-ZnO Schottky nano-contact have been studied. Well aligned ZnO nanorod arrays were synthesized by two-step wet-chemical method. A Pt-coated conducting probe of atomic force microscope was placed on the head face of the ZnO nanorod, thereby forming a Pt-ZnO nano-contact. The I-V characteristic curve shows that the Pt-ZnO nano-contact exhibits rectifying effect, like a Schottky diode with an ideality factor of 3.2 and a reverse-bias breakdown voltage more than -10 V. The study suggests that a high electric field is induced on the ZnO beneath the contact point when a bias voltage is applied, hence, the Schottky barrier thickness is decreased, and results in easier tunneling across the Pt-ZnO interface and a large ideality factor.

关 键 词：ZNO nanorod SCHOTTKY CONTACT IDEALITY FACTOR 

分 类 号：TN311.7[电子电信—物理电子学]