Carbon nanotube transistors with graphene oxide films as gate dielectrics  

作　　者：FU WangYang,LIU Lei,WANG WenLong,WU MuHong,XU Zhi,BAI XueDong & WANG EnGe Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China 

出　　处：《Science China(Physics,Mechanics & Astronomy)》2010年第5期828-833,共6页中国科学：物理学、力学、天文学（英文版）

基　　金：support from the National Natural Science Foundation of China (Grant Nos. 10874218, 50725209 and 60621091);Ministry of Science and Technology (Grant Nos. 2009DFA01290, 2006AA03Z402, 2007AA03Z353 and 2007CB936203),and Chinese Academy of Sciences

摘　　要：Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.

关 键 词：carbon-based nanoelectronics GRAPHENE OXIDE GATE dielectrics 

分 类 号：O613.71[理学—无机化学]