Structural Un-uniformity and Electrical Anisotropy of μc-Si:H Films  

作　　者：HAN Chunlong1, LI Juan2 (1. Zhong Huan System Engineering Co., Ltd, Tianjin 300060, CHN 2. Institute of Photo-electronics, Nankai University, Tianjin 300071, CHN) 

出　　处：《Semiconductor Photonics and Technology》2010年第4期137-140,145,共5页半导体光子学与技术（英文版）

摘　　要：Structural un-uniformity and electrical anisotropy of μc-Si∶H film are investigated in this paper. It is found that the structure of μc-Si∶H film along the direction perpendicular to the substrate is not uniform, which is modulated by film thickness. In addition, there is a dark conductivity anisotropy along the direction parallel(σ∥) and perpendicular(σ⊥)to the substrate in μc-Si∶H film. The reasons for such an property of μc-Si∶H film and the effect of oxygen contamination are analyzed.Structural un-uniformity and electrical anisotropy of μc-Si∶H film are investigated in this paper. It is found that the structure of μc-Si∶H film along the direction perpendicular to the substrate is not uniform, which is modulated by film thickness. In addition, there is a dark conductivity anisotropy along the direction parallel(σ∥) and perpendicular(σ⊥)to the substrate in μc-Si∶H film. The reasons for such an property of μc-Si∶H film and the effect of oxygen contamination are analyzed.

关 键 词：μc-Si∶H THIN film MICRO-STRUCTURE ANISOTROPY electrical PROPERTY 

分 类 号：TN3[电子电信—物理电子学]