应变对GaN/Ga_xIn_(1-x)N异质结中界面声子的影响  

Electron-optical-phonon Scattering Rate in a Strained GaN/GaxIn1-xN Heterojunction

作　　者：李永治[1] 田红晓[1] 白梅花[1] 

机构地区：[1]内蒙古科技大学数理与生物工程学院,内蒙古包头014010

出　　处：《阴山学刊（自然科学版）》2009年第4期42-43,共2页Yinshan Academic Journal(Natural Science Edition)

摘　　要：本文采用介电连续模型,讨论了晶格应变对材料的体光学声子频率、介电常数、禁带宽度和电子带质量的影响.对GaN/GaxIn1-xN异质结中材料的界面声子频率随晶格应变的变化关系进行了数值计算.结果显示,应变对该异质结的界面声子频率有一定的影响。In this thesis,the dielectric continuum model is adopted to investigate the effects of lattice strain on bulk optical phonon frequencies,dielectric constants,energy band gap and electronic band mass. The numerical computation is performed for the variations of interface phonons with lattice strain in GaN/GaxIn1-xN heterojunction by considering the realistic heterojunction potential.

关 键 词：氮化物 异质结 晶格应变 界面声子 

分 类 号：O735[理学—晶体学]