高浓度Sm_2O_3掺杂的BIT陶瓷微结构与电性能研究  

Investigation on Microstructure and Electrical Properties of Sm_2O_3-doped Bismuth Titanate Ceramics

作　　者：庄永勇[1,2] 蒲永平[1,2] 王瑾菲 杨公安[1] 

机构地区：[1]陕西科技大学材料科学与工程学院,西安710021 [2]浙江温州轻工研究院,温州325003

出　　处：《人工晶体学报》2009年第S1期108-110,共3页Journal of Synthetic Crystals

基　　金：教育部科学技术研究重点项目(No.209126);浙江温州科技计划项目(H20080042);陕西省教育厅专项科研基金(No.08KJ222);陕西科技大学研究生创新基金

摘　　要：采用固相烧结工艺制备了高浓度Sm2O3掺杂的Bi4Ti3O12(BIT)基陶瓷材料。研究了不同的Sm2O3掺杂浓度和温度对BIT基陶瓷材料的显微结构及电性能的影响。结果表明:当Sm2O3浓度为12.0 mol%时,有Bi0.56Sm1.44Ti2O7第二相出现,BIT陶瓷室温介电常数为114,室温介质损耗(tanδ)为0.002;当Sm2O3浓度为6.0mol%时,陶瓷材料的室温介电常数为119,室温介质损耗(tanδ)为0.0027。High concentration Sm2O3 doped Bi4Ti3O12(BIT)-based ceramics were prepared by solid-state reaction method.The influence of the concentration of Sm2O3-doping and temperature on the crystal phase,microstructure and electrical properties of the sample were investigated.The results indicated that the formation of the new compound was observed as Bi0.56Sm1.44Ti2O7,the dielectric constant and dielectric loss(tan δ) were 114 and 0.002 respectively in room temperature when the concentration of Sm2O3-doping was 12.0 mol%.Correspondingly,they were 119 and 0.0027 respectively as the concentration of Sm2O3 was 6.0 mol%.

关 键 词：Bi4Ti3O12陶瓷 Sm2O3掺杂 高浓度 微观结构 电性能 

分 类 号：TQ174.12[化学工程—陶瓷工业]