半水基凝胶注模工艺制备变密度氮化硅陶瓷研究  

Study on Density-controlled Si_3N_4 Ceramic Synthesized by Half Aqueous Gel-casting Method

作　　者：李宝伟[1] 陈大明[1] 仝建峰[1] 王岭[1] 黄浩[1] 刘晓光[1] 

机构地区：[1]北京航空材料研究院先进复合材料国防科技重点实验室,北京100095

出　　处：《人工晶体学报》2009年第S1期111-114,共4页Journal of Synthetic Crystals

基　　金：国防预研基金项目

摘　　要：本文以淀粉为模板剂,研究了半水基注模凝胶技术制备变密度氮化硅陶瓷材料的方法。结果表明:氮化硅陶瓷材料的密度随淀粉含量的增加,而逐渐降低;氮化硅陶瓷材料的介电常数随密度的降低而逐渐降低。利用此方法成功制备出密度1.38 g/cm3,介电常数2.6的低密度氮化硅陶瓷材料。The density-controlled Si3N4 ceramic was synthesized by half aqueous gel-casting method using starch as template.The results indicated the bulk density decreased as the starch content increasing,the dielectric constant of the Si3N4 ceramic decreased as the starch content increasing.High properties can be obtained by the half aqueous gel-casting method and the bulk density is 1.38 g/cm3,and the dielectric constant is 2.6,respectively.

关 键 词：半水基注模凝胶 变密度氮化硅 介电常数 

分 类 号：TQ174.1[化学工程—陶瓷工业]