电泳沉积法制备超疏水ZnO薄膜  

Preparation of Super-hydrophobic ZnO Films by Electrophoretic Deposition

作　　者：何新华[1,2] 陈志武[1,2] 李茂[1] 罗磊[1] 

机构地区：[1]华南理工大学材料科学与工程学院,广州510640 [2]湘潭大学低维材料及其应用技术教育部重点实验室,湘潭411105

出　　处：《人工晶体学报》2009年第S1期137-140,共4页Journal of Synthetic Crystals

基　　金：广东省科技计划项目(2007A010500012);华南理工大学国家大学生创新性实验计划(B09-Y9080040);低维材料及其应用技术教育部重点实验室开放课题资助课题(KF0701)

摘　　要：采用电泳沉积法在ITO导电玻璃基片上制备超疏水ZnO薄膜,研究了电流强度、沉积时间和缓冲层对薄膜的晶相、显微结构、透光度和润湿性的影响。利用SEM和XRD表征薄膜的表面形貌和晶相组成。结果表明:所沉积的薄膜主要由ZnO和Zn(OH)2两相组成,在空气中放置一段时间后全部转变为ZnO相,电泳沉积膜是由ZnO纳米晶片无序排列组成的网状结构。电流强度和缓冲层对薄膜的形貌影响较大,较高的电流强度可获得大孔洞的网状结构,涂覆ZnO缓冲层显著改善了薄膜的均匀性。Super-hydrophobic ZnO films were fabricated on conductive ITO glass substrates by electrophoretic deposition(EPD).The effect of current density,deposition time and buffer layer on the crystal phase,microstructure,transmittance and wettibility were investigated.Surface morphology and phase composition were characterized by SEM and XRD.The results indieated the as-deposited films mainly consist of ZnO and Zn(OH)2 two phase,and ZnO phases were completely formed after exposing to the air for a long time.ZnO films were reticular structures with random arrangement of nano crystal plates.Current density and buffer layer have great effect on the morphology of ZnO films.Reticular structures with large gaps are obtained at a large current density,and ZnO coated buffer layer would enhance the uniformity of as-deposited ZnO films remarkably.

关 键 词：ZNO 电泳沉积 疏水性 网状结构 

分 类 号：O614.241[理学—无机化学]