宽截止长波红外带通滤光片的研制  

Development of Infrared Pass-Band Filters with Wide Rejection Band

作　　者：叶自煜[1] 王多书[1] 张佰森[1] 陈焘[1] 马锋[1] 盖志刚[1] 

机构地区：[1]表面工程技术国家重点实验室,兰州空间技术物理研究所,兰州730000

出　　处：《真空科学与技术学报》2009年第S1期39-41,共3页Chinese Journal of Vacuum Science and Technology

基　　金：表面工程技术国家级重点实验室基金资助项目(No.51418060305HT6007)

摘　　要：针对空间用宽截止长波红外带通滤光片具有通带内平均透射率高、抑制带截止深度深、波纹系数小,可适应复杂环境条件,具有高稳定性和高可靠性等特点,以10.03μm～12.50μm和10.6μm～11.2μm两类宽截止长波红外带通滤光片为研究对象,论述了宽截止长波红外带通滤光片的设计原则和方法,采用"会聚光红外光学系统"和等离子体辅助沉积工艺成功镀制了空间用宽截止长波红外带通滤光片。指出等离子体辅助沉积工艺更有利于改善长波红外滤光片膜层的显微结构和残余应力消除。A novel type of infrared pass-band filters,(10.03μm～12.50μm and 10.6μm～11.2μm)with wide rejection band used in spacecraft,has been successfully designed and fabricated with composite bi-layer films grown by plasma assisted chemical vapor deposition(PE-CVD) and with a convergence infrared optical system.The influence of the composite films growth conditions on the strengths of the filters,such as high average transmittance,deep reflectance of the rejection region,small ripples and adapting to extreme environment,was studied.The results show that the film type,film thickness,and film growth technique significantly affect the property of the filter.For instance,high quality long-wave infrared pass-band filter with pass-band wider than 150 nm,can be fabricated with PbTe/ZnS bi-layers grown by PE-CVD on Ge substrates.

关 键 词：滤光片 长波红外 光学系统 设计 镀制 

分 类 号：O484.41[理学—固体物理]