缠绕式射频磁控溅射聚酯(PET)表面沉积氧化硅(SiO_x)薄膜的研究  

Growth of Silica Films on Polythylene Terephthalate Substrates by RF Magnetron Sputtering

作　　者：刘壮[1] 林晶[1] 孙智慧[1] 高德[1] 

机构地区：[1]哈尔滨商业大学,哈尔滨150028

出　　处：《真空科学与技术学报》2009年第S1期94-97,共4页Chinese Journal of Vacuum Science and Technology

基　　金："十一五"国家科技支撑重大项目"食品新材料的研究与开发"课题(No.2006BAD05A05);印刷包装材料与技术北京市重点实验室开放课题(KF200705)

摘　　要：采用缠绕式射频磁控溅射方法在PET表面沉积SiO_x薄膜。研究了制备工艺对薄膜组成、表面形貌、阻隔性能的影响。通过红外光谱(FTIR)、扫描电子显微镜(SEM)、原子力显微镜(AFM)观察分析了射频功率、工作压强等参数对SiO_x薄膜性能的影响,得到最佳工艺参数;通过透湿与透氧测试,2000W、0.7Pa得到SiO_x薄膜对水蒸汽的阻隔性提高了约15倍,对氧气的阻隔性提高了25倍。The silicon dioxide films were grown by RF magnetron sputtering on polythylene terephthalate(PET) substrates on industrial scale.The microstiuctures,compositions and barrier properties of the SiO_2 films were characterized with Fourier transform infrared spectroscopy(FTIR),scanning electron microscopy(SEM) atomic force microscopy(AFM) and oxygen transmission rate(OTR) measurement.The impacts of film growth conditions,including the RF power,argon pressure,and substrate moving speed on film barrier properties were studied.The results show that small RF power increases the stress of the PET substrates,and that a judicious choice of film growth conditions results in good gas barrier properties.For example,the film grown at a RF power of 2000W,a pressure of 0.7Pa,and a speed of 1m·min^(-1) reduces the water vapor and oxygen transmission rates by 15 times and 25 times,respectively.

关 键 词：射频磁控溅射 SiO_x薄膜 表面形貌 阻隔性 红外吸收光谱 

分 类 号：TB484.5[一般工业技术—包装工程]