Development of Integrated Micro Nano-positioning xy-stage based on Bulk Micro-machining  

作　　者：王家畴 

机构地区：[1]State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences [2]State Key Laboratory of Robotic and System,Harbin Institute of Technology

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2009年第S1期195-199,共5页武汉理工大学学报（材料科学英文版）

基　　金：Funded by the High Technology Research and Development Programme of China (2007AA04Z315)

摘　　要：For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacement sensor.The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching (DRIE) in both sides of wafer.The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge.A simple vertical sidewall surface piezoresistor process which improves on the basis of the conventional surface piezoresistor technique is proposed.The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique.The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV/μm without amplification and the linearity is better than 0.814%.Under 30 V driving voltage,a ±10 μm single-axis displacement is measured without crosstalk.The displacement resolution of the micro xy-stage is better than 10.8 nm.For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacement sensor.The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching (DRIE) in both sides of wafer.The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge.A simple vertical sidewall surface piezoresistor process which improves on the basis of the conventional surface piezoresistor technique is proposed.The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique.The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV/μm without amplification and the linearity is better than 0.814%.Under 30 V driving voltage,a ±10 μm single-axis displacement is measured without crosstalk.The displacement resolution of the micro xy-stage is better than 10.8 nm.

关 键 词：MEMS silicon integrated xy-stage comb-driven actuator vertical sidewall surface piezoresistor 

分 类 号：TH16[机械工程—机械制造及自动化]