天线几何结构对低温GaAs光电导THz发射的影响  

Effect of the Antenna Structure on THz Radiation Properties from Low-Temperature-Grown GaAs Photoconductive Emitters

作　　者：崔利杰[1] 曾一平[1] 王保强[1] 朱战平[1] 石小溪[2] 黄振[2] 李淼[2] 赵国忠[2] 

机构地区：[1]中国科学院半导体研究所材料中心,北京100083 [2]首都师范大学物理系,北京100087

出　　处：《半导体技术》2008年第S1期52-54,共3页Semiconductor Technology

基　　金：国家自然科学基金(60606025);北京市自然科学基金(4073030)

摘　　要：研究了用飞秒激光激发低温生长的GaAs(LT-GaAs)大孔径光电导天线产生太赫兹(THz)波的辐射特性。通过设计七种大孔径天线结构,来研究天线的几何结构对THz发射性能的影响。实验发现七种天线的有效频谱宽度都达到了3THz,而且七种不同几何形状天线的THz发射谱与频率谱并没有太显著的差别。The terahertz radiation properties of low-temperature-grown GaAs(LT-GaAs)photoconductive antenna excited by femtosecond laser pulse was investigated.Seven kinds of photoconductive antennas(PCA)were designed on the same LT-GaAs to investigate how the antenna structure influenced on the terahertz radiation properties.The spectral bandwidth of 3 THz was obtained with time domain spectroscopy for all PCA.Yet the radiation spectra of seven kinds of PCA shows no significant difference.

关 键 词：太赫兹 低温砷化镓薄膜 光电导材料 时域光谱测试 

分 类 号：TN304.23[电子电信—物理电子学]