ZnO半导体纳米线/PVA复合结构的制备及其紫外发光特性  

Fabrication and UV Luminescence Properties of ZnO Semiconductor Nanowires/PVA Composite Film

作　　者：贺永宁[1] 张雯[2] 崔吾元[1] 崔万照[3] 王东[1] 朱长纯[1] 侯洵[1,2] 

机构地区：[1]西安交通大学电子与信息工程学院 [2]西安交通大学理学院,西安710049 [3]中国空间技术研究院西安分院空间微波技术国家重点实验室,西安710000

出　　处：《半导体技术》2008年第S1期361-364,共4页Semiconductor Technology

基　　金：国家自然科学基金(60876038);国家预研基金(9140C5304020804)

摘　　要：采用高纯Zn粉氧化工艺在常压、盲口石英舟及生长温度600℃时得到了形貌一致、产额高的ZnO半导体纳米线粉;将该ZnO半导体纳米线粉分散在PVA中并通过热聚合形成了ZnO半导体纳米线/PVA复合结构膜。研究表明,PVA为ZnO半导体纳米线提供了隔离和支撑。而且光致发光结果显示这种复合结构膜具有较强的紫外带边发射特性,同时由于聚合物的表面钝化作用使得由纳米线表面缺陷引起的深能级辐射发光峰得到抑制。这种半导体复合膜还具有易于移植、可图形化的工艺特点,对ZnO半导体纳米线光电器件的制作与开发具有重要价值。The powder of ZnO nanowires with high yield and homogeneous dimension was synthesized using the special quartz boat at 600 ℃ by evaporation of metal zinc powder with high purity.No catalysts are necessary and the fabrication processes are repeatable.The ZnO nanowires/polyethylene glycol(PVA)composite film was prepared by ultrasonic dispersion and thermal polymerization.The ZnO nanowires were embedded in PVA which could support the nanowires and make them be separated.Photoluminescence(PL)spectra for ZnO nanowires and its composite film using a He-Cd laser line of 325 nm as the excitation source were measured at room temperature.Both samples show a sharp strong ultraviolet UV near-band edge emission due to the size confinement effect for exciton and carriers in ZnO nanowires.However,the green peak in the composite film was suppressed obviously due to the passivating action from the polymer.The ZnO nanowires/PVA composite film is wealthy for the application to ZnO nano optoelectronic devices because the films can be fabricated on several kinds of substrates with designed figures.

关 键 词：氧化锌半导体 纳米线/聚合物复合膜 紫外带边发光砷化镓 氮化镓 

分 类 号：TN304.21[电子电信—物理电子学]