FABRICATION AND CHARACTERATION OF NANOPOROUS SILICA FILM  

FABRICATION AND CHARACTERATION OF NANOPOROUS SILICA FILM

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作  者:殷明志 张良莹 姚熹 

机构地区:[1]Electronic Materials Research Laboratory, Xi'an Jiaotong University,Xi'an 710049, China

出  处:《Journal of Pharmaceutical Analysis》2003年第2期152-156,161,共6页药物分析学报(英文版)

基  金:ThisworkwassupportedbytheNational973ProjectofChina(No.2002CB613305).ElectronicmaterialinstituteofXianJiaotongUniversity.

摘  要:Colloidal silica sol is formed by a novel hydrolyzing procedure of tetraethyl orthosilicate(TEOS) catalyzing with NH 3 ·H 2 O in aqueous mediums. Glycerol, combining with the hydrolyzed intermediates of TEOS, controls growing of the silica particles; poly(vinyl vinyl alcohol makes the colloidal silica sol with polymeric structure and spinning, thermal strain makes the gel silica film changed into a nanoporous structure with diameter ranging 50-150 nm. Morphologies of the nanoporous silica film have been characterized; the porosities (%) is 32-64; the average dielectric constant at 1MHz region is 2.0 and 2.1; the thermal conductivity is less than 0.8. Chemical mechanism of the sol gel process is discussed.Colloidal silica sol is formed by a novel hydrolyzing procedure of tetraethyl orthosilicate(TEOS) catalyzing with NH 3 ·H 2 O in aqueous mediums. Glycerol, combining with the hydrolyzed intermediates of TEOS, controls growing of the silica particles; poly(vinyl vinyl alcohol makes the colloidal silica sol with polymeric structure and spinning, thermal strain makes the gel silica film changed into a nanoporous structure with diameter ranging 50-150 nm. Morphologies of the nanoporous silica film have been characterized; the porosities (%) is 32-64; the average dielectric constant at 1MHz region is 2.0 and 2.1; the thermal conductivity is less than 0.8. Chemical mechanism of the sol gel process is discussed.

关 键 词:TETRAETHYLORTHOSILICATE sol  gel technique nanoporous silica film thermal conductivity 

分 类 号:TB383[一般工业技术—材料科学与工程]

 

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