Relation between EL2 Groupand EL6 Group in SI-GaAs  

作　　者：吴凤美 赵周英 

出　　处：《Rare Metals》1996年第3期191-195,共5页稀有金属（英文版）

摘　　要：The annealing behavior for EL2 and EL6 groups as dominant deep levels in semi-insulating GaAs was presented using Photo Induced Transient Spectroscopy measurement (PITS). During rapid thermal annealing, a relation was identified between EL2 group at 0.79 and 0.82 eV and EL6 group at 0.24, 0.27 and 0.82 eV below the conduction band. It is found that they may be close in structure, and belong to the EL2 and EL6 groups, respectively. In rapidly annealed samples, the quantity of all defects in the EL2 group increases, while that in the EL6 group decreases. However, by furnace annealing at 950°C for 5 h, some of the defects in the EL2 group break up, and the quantity of all defects in the EL6 group increases. It is suggested that the EL2 group and EL6 group are related in their microscopy structures. The relation between the two groups and origins was also discussed.The annealing behavior for EL2 and EL6 groups as dominant deep levels in semi-insulating GaAs was presented using Photo Induced Transient Spectroscopy measurement (PITS). During rapid thermal annealing, a relation was identified between EL2 group at 0.79 and 0.82 eV and EL6 group at 0.24, 0.27 and 0.82 eV below the conduction band. It is found that they may be close in structure, and belong to the EL2 and EL6 groups, respectively. In rapidly annealed samples, the quantity of all defects in the EL2 group increases, while that in the EL6 group decreases. However, by furnace annealing at 950°C for 5 h, some of the defects in the EL2 group break up, and the quantity of all defects in the EL6 group increases. It is suggested that the EL2 group and EL6 group are related in their microscopy structures. The relation between the two groups and origins was also discussed.

关 键 词：ANNEALING Crystal defects Electron energy levels Silicon on insulator technology SPECTROMETRY 

分 类 号：TG146.431[一般工业技术—材料科学与工程]