Raman　Study　of　Defects　in　SI－GaAs　and　Se－doped　Epitaxial　Layer　Irradiated　by　10　MeV　Electrons  

作　　者：吴凤美 立海峰 陈武鸣 程光煦 杭德生 

出　　处：《Rare Metals》1996年第1期12-15,共4页稀有金属（英文版）

摘　　要：Raman scattering measurements on Se-doped GaAs epitaxial layers and semi-insulating (SI) GaAs irradi-ated by 10 Mev electrons have been investigated. Several defect-related features were observed. We suggestthat the 220 cm ￣-1mode is attribute to As_1 which is associated, at least in part, with EL2 and EL12 defects.For Sedoped samples, the Raman peaks at 205 and 258 cm￣-1 may be due to vibrational modes in small clus-ters of arsenic, and the 77 and 185 ￣-1modes are probably associated with disorder-activated first order Ra-man scattering.Irradiated results show that the small clusters of arsenic and disorder state are increased with in-creasing irradiation fluences. Other Raman peaks will also be discussed in this paper.Raman scattering measurements on Se-doped GaAs epitaxial layers and semi-insulating (SI) GaAs irradi-ated by 10 Mev electrons have been investigated. Several defect-related features were observed. We suggestthat the 220 cm ￣-1mode is attribute to As_1 which is associated, at least in part, with EL2 and EL12 defects.For Sedoped samples, the Raman peaks at 205 and 258 cm￣-1 may be due to vibrational modes in small clus-ters of arsenic, and the 77 and 185 ￣-1modes are probably associated with disorder-activated first order Ra-man scattering.Irradiated results show that the small clusters of arsenic and disorder state are increased with in-creasing irradiation fluences. Other Raman peaks will also be discussed in this paper.

关 键 词：Undoped SI-GaAs Se-doped epitaxial layer Raman technique 10 Mev electron-irradiation 

分 类 号：TN305.3[电子电信—物理电子学]