ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE  

作　　者：Li Yao Zheng Jiang Shen Keqiang Wei Tongli(Microelectronics Center, Southeast University, Nanjing 210096) 

出　　处：《Journal of Electronics(China)》1996年第3期275-283,共9页电子科学学刊（英文版）

摘　　要：Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modification of SPICE BJT model about temperature and design of low temperature ECL circuit are discussed.Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modification of SPICE BJT model about temperature and design of low temperature ECL circuit are discussed.

关 键 词：ECL CIRCUIT LOW TEMPERATURE DC Characteristics SPICE 

分 类 号：TN791[电子电信—电路与系统]