ELECTRON-PHONON COUPLING AND OPTICALELECTRICAL PROPERTIES OF DEEP CENTERS IN GaAs_(1-x)P_x(Te)  

作　　者：周必忠 林东海 黄景昭 陈世帛 

机构地区：[1]Department of Physics, Xiarnen University, Xiarnen 361005, PRC

出　　处：《Chinese Science Bulletin》1992年第12期988-992,共5页

基　　金：Project supported by the National Natural Science Foundation of China and the Provincial Natural Science Foundation of Fujian

摘　　要：Ⅰ. INTRODUCTIONIn recent years, some strange behaviors of donor-related deep centers （DX center） in semiconductors of Ⅲ-Ⅴ compound mixcrystals such as Ge, Si or Sn in Al_xGa_1-x As and S, Se or Te in GaAs_1-xP_x, have attracted much interest. Although the types of basic matters and impurities are different, some properties of the deep centers are almost the same. For example, they introduce one shallow energy level and one or a few deep energy levels; the con-

关 键 词：GaAs₁-_xP_x(Te) deep centers ELECTRON-PHONON coupling 

分 类 号：N[自然科学总论]