四极二次离子质谱仪器参数对定量分析影响的研究——GaAs定量分析基础研究之一  

FUNDAMENTAL STUDIES OF QUANTITATIVE ANALYSIS OF IMPURITIES IN GaAs MATERIALS PART 1: DEPENDENCE OF QUANTITATIVE ANALYSIS UPON THE INSTRUMENTAL PARAMETERS OF QUADRUPOLE-BASED SIMS

作　　者：程宝洪 查良镇[1] 张立宝 陈春华 

机构地区：[1]清华大学电子工程系 [2]中科院表面物理实验室

出　　处：《真空科学与技术学报》1991年第2期121-127,共7页Chinese Journal of Vacuum Science and Technology

摘　　要：本文针对GaAs材料定量分析的要求,对法国RIBER公司四极SIMS仪器的工作参数进行了调整,研究了二次离子分析系统、电子倍增器的参数和靶电位对仪器性能的影响。同时研究了氧源注氧对二次离子产额及信噪比的影响。这些研究为GaAs材料定量分析打下了基础。According to the demands for quantitative analysis of impurities in GaAs ma-terials, the instrumental parameters of a quadrupole-based SIMS made by RIBERin France have been adjusted. The influence of the parameters of the secondaryion optics, the electron multiplier and the target potential on the instrumentalperformance has been studied. The effect of the oxygen flooding on the secondaryion yield and the ratio of signal to noise has also been investigated with anoxygen primary ion source. These studies have laid the foundation for quantita-tive analysis of imparities in GaAs materials.

关 键 词：质谱仪器 四极 电子倍增器 离子分析 基础研究 仪器性能 产额 SIMS 信噪比 氧源 

分 类 号：TB7-55[一般工业技术—真空技术]