PTFE/SiO_2复合材料的DSC分析及其结晶行为研究  

DSC Analysis and Crystallization Behavior of the PTFE /SiO_2 Composites

作　　者：崔毓仁[1] 钟朝位[1] 袁颖[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《材料开发与应用》2013年第6期29-33,共5页Development and Application of Materials

基　　金：中央高校基本科研业务费专项资金资助(ZYGX2012J035)

摘　　要：采用DSC技术,研究不同热压温度制备的PTFE/SiO2复合材料以及纳米SiO2部分取代微米SiO2的PTFE/SiO2复合材料的非等温结晶行为。DSC分析表明热压温度高于370℃时,PTFE分子聚合度下降,晶态PTFE微观形貌发生改变,其性能恶化。对复合材料非等温结晶DSC曲线应用Avrami方程分析发现,结晶过程包含了均相成核和异相成核两种成核机理。纳米SiO2取代部分微米SiO2量小于0.25%时,对PTFE成核作用有一定提升,当取代量大于0.25%时,由于偶联剂用量一定,造成SiO2颗粒团聚以及与PTFE界面相容性变差,成核效果不明显。By means of DSC,non-isothermal crystallization behavior of PTFE /SiO2composite at different thermoforming temperature is investigated in which part of micro-SiO2is replaced by nano-SiO2.The results of DSC analysis show that when the thermoforming temperature is higher than 370℃,as degree of polymerization decreases,microstructure of the crystalline PTFE changes and performance of the composites deteriorates.The non-isothermal crystallization DSC analysis of composites indicates that their crystallization process includes both homogeneous nucleation and heterogeneous nucleation.When the substitution is less than 0.25%,the nucleation is enhanced.When the substitution is more than 0.25%,the nucleation enhancemont is not obvious for SiO2particle agglomeration and poor interfacial compatibility between the PTFE and SiO2.

关 键 词：DSC 结晶度 热压温度 Avrami方程 异相成核 

分 类 号：TB332[一般工业技术—材料科学与工程]