Al沉积n型多孔硅表面钝化及其发光性能  

Surface passivation by Al depositing of n-type porous silicon and its photoluminescence performance

作　　者：宋晓岚[1] 张颖[1] 黄书涛[1] 张铭婉[1] 喻振兴[1] 

机构地区：[1]中南大学资源加工与生物工程学院,湖南长沙410083

出　　处：《中南大学学报（自然科学版）》2013年第9期3569-3573,共5页Journal of Central South University:Science and Technology

基　　金：国家高技术研究发展计划("863"计划)项目(2007AA06Z121);国家自然科学基金资助项目(50774095);中南大学大学生创新训练项目(CL12111)

摘　　要：采用电化学沉积Al方法钝化用脉冲电化学腐蚀制备的n型多孔硅(n-type porous silicon,n-PS)表面以改善其发光性能和稳定性。通过扫描电镜(SEM)、傅里叶变换红外吸收光谱(FT-IR)及在室温于500~700 nm范围内荧光光谱研究n-PS表面Al钝化后的表面结构、形貌及光致发光性能(PL),探讨Al在n-PS表面的钝化作用,并通过改变电压和时间研究钝化条件对PL性能的影响。研究结果表明:多孔硅经Al钝化后其表面结构显得更加致密均匀;与钝化前相比,其发光强度加强,约为钝化前的2倍,且分别在钝化电压为18 V及钝化时间为60 min或钝化电压为25 V及钝化时间为30 min左右时,其发光强度较高。The Al electrochemical depositing technique was applied to process surface of n type porous silicon(n-PS) obtained by etching method of pulse electrochemical in order to improve the photoluminescence(PL) performance and its stability of n-PS.Scanning electron microscopy(SEM),fourier transform infrared(FT-IR) spectroscopy and fluorescence spectroscopy with wavelength range of 500-700 nm of room temperature were used to study the surface structure and morphology,PL performance of n-PS and passivation function with Al depositing.The influence of passivating condition on the PL performance of n-PS was investigated by changing voltage and time.The results show that Al deposited n-PS can form more compact and well-proportioned surface structure.The luminous intensity is double than that of unpassivated n-PS.When the passivating voltage is 18 V and the passivating time is 60 min or the passivating voltage is 25 V and the passivating time is 30 min,the luminous intensity is higher.

关 键 词：n型多孔硅 Al沉积 表面钝化 光致发光性能 

分 类 号：TN304.1[电子电信—物理电子学]