Dy^(3+)掺杂γ-AlON基荧光粉的合成及其发光性能  

Synthesis and Photoluminescence of Dy^(3+)-Doped γ-AlON Phosphors

作　　者：钟飞[1,2] 刘学建[1] 黄政仁[1] 李会利[3] 

机构地区：[1]中国科学院上海硅酸盐研究所 高性能陶瓷和超微结构国家重点实验室,上海200050 [2]中国科学院研究生院,北京100049 [3]华东师范大学,上海200062

出　　处：《稀有金属材料与工程》2013年第S1期26-28,共3页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助(51172263);高性能陶瓷和超微结构国家重点实验室开放课题基金(SKL201114SIC)

摘　　要：以AlN、Al2O3、Dy2O3为原料,采用高温固相反应法在1900℃、5MPa氮气气氛条件下合成AlON:Dy3+荧光粉,研究了Dy3+掺杂离子浓度对荧光粉的物相组成和发光性能的影响。结果表明:当Dy3+掺杂浓度较低时(x=0.005～0.100)合成纯的AlON相,随着Dy3+掺杂浓度的增大(x=0.125～0.250),出现微量的DyAlO3相。该荧光粉在354nm处有最强激发,其在354nm激发下呈现3个发射峰,分别位于蓝光483nm(19F9/2→6H15/2)、黄光578nm(19F9/2→6H13/2)和红光670nm(19F9/2→6H11/2),其中在578nm处黄光为最强发射。随着掺杂离子Dy3+浓度的增大,其激发峰和发射峰的强度均表现出先增大后减小的变化规律,其中当x=0.050时,发射强度最高。Rare-earth Dy3+ doped AlON phosphors were synthesized at 1900 ℃ under 5 MPa N2 atmosphere with AlN, Al2O3 and Dy2O3 as starting materials by a solid-state reaction method. Phase compositions and photoluminescence of as-prepared AlON:Dy3+ phosphors were investigated. The results indicate that pure AlON phase occurs at lower Dy3+ concentration (x=0.005～0.100) while there exist trace DyAlO3 phase at higher Dy3+ concentration (x=0.125～0.250). There are three emission peaks located at 483 nm ( 19F9/2 → 6H15/2 ), 578 nm ( 19F9/2 → 6H13/2 ), and 670 nm ( 19F9/2 → 6H11/2 ), respectively, and the most intense emission peak is at 578 nm excited by 354 nm. The luminescence intensity increases gradually with increasing of Dy3+ concentration, and achieves the maximum at x=0.050.

关 键 词：DY3+ ALON 荧光粉 发光性能 

分 类 号：O482.31[理学—固体物理]