燃烧合成法制备N掺杂SiC粉体及其微波介电性能  

Preparation and Microwave Dielectric Properties of N-Doped SiC Powders by Combustion Synthesis

作　　者：李智敏[1,2] 黄云霞[1] 卫晓黑[1] 张茂林[1] 周万城[3] 郝跃[2] 

机构地区：[1]西安电子科技大学技术物理学院,陕西西安710071 [2]西安电子科技大学 宽禁带半导体材料与器件重点实验室,陕西西安710071 [3]西北工业大学 凝固技术国家重点实验室,陕西西安710072

出　　处：《稀有金属材料与工程》2013年第S1期154-156,共3页Rare Metal Materials and Engineering

基　　金：中央高校基本科研业务费专项资金资助项目(K5051205006;K5051205010)

摘　　要：采用燃烧合成法,以硅粉和炭黑为原料、固态氮化剂α-Si3N4为掺杂剂及聚四氟乙烯(polytetrafluoroethylene,PTFE)为化学活性剂,制备N掺杂的β-SiC粉体吸收剂。通过X射线衍射分析和扫描电子显微镜对燃烧产物进行了表征。结果表明:PTFE含量为10wt%时,燃烧产物中β-SiC的纯度较高,具有较好的颗粒形貌。利用矢量网络分析仪测试了样品在8.2～12.4GHz频率范围的微波介电常数,10wt%PTFE样品显示了最大的介电常数实部ε′、虚部ε″和损耗角正切tanδ。N-doped SiC powders were prepared by combustion synthesis using silicon powder and carbon black as starting materials, with α-Si 3 N 4 as solid nitrogen dopant and polytetrafluoroethylene (PTFE) as the chemical activator, and then the products were characterized by X-ray diffraction and scanning electron microscope. Results show that prepared β-SiC has better purity and particle morphology when the amount of PTFE is 10wt%. The permittivities of as-prepared samples were determined by vector network analyzer in the frequency range 8.2～12.4 GHz. The sample with 10wt% PTFE reveals the greatest values in the real component ε′ and imaginary component ε″ of permittivity and dielectric loss tanδ in all three samples.

关 键 词：Β-SIC N掺杂 燃烧合成 介电性能 

分 类 号：TB383.3[一般工业技术—材料科学与工程]