新型低介低损耗BaTiSi_2O_7微波介质陶瓷研究  

New BaTiSi_2O_7 Microwave Ceramics with Low Permittivity and Dielectric Loss

作　　者：朱满康[1] 管晓辉 吴兴轩[1] 侯育冬[1] 严辉[1] 

机构地区：[1]北京工业大学,北京100124

出　　处：《稀有金属材料与工程》2013年第S1期189-192,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(51172006)

摘　　要：BaTiSi2O7具有独特的TiO5四方单锥,有利于抑制离子极化弛豫引起的介电损耗。采用传统氧化物混合法制备了BaTiSi2O7陶瓷。X射线衍射和Raman散射光谱分析表明,该陶瓷具有纯BaTiSi2O7相,其结构中含有TiO5四方单锥结构。同时,高频电学分析表明,随着烧结温度的增加,其相对介电常数在0.1kHz～1GHz频率范围内为8～10,介电损耗在10-4左右,有望作为低损耗微波介质材料。BaTiSi2O7 have a unique TiO5 pyramid polyhedron in its lattice, which is beneficial to control the dielectric loss induced by the relaxation of ion polarization. In this paper, BaTiSi2O7 ceramics was prepared using the conventional solid oxide reaction method. X ray diffraction and Raman scattering spectra affirm the BaTiSi2O7 pure phase and existence of TiO5 pyramid structure. Besides, the microwave dielectric measurement shows that the dielectric permittivity varies in 8～10 and dielectric loss lowers to 10-4 as the sintering temperature increases to 1145℃. The low dielectric loss of the BaTiSi2O7 ceramics indicates its potential application as microwave dielectric materials with low dielectric permittivity and loss.

关 键 词：微波介质陶瓷 BaTiSi2O7 介质损耗 

分 类 号：TQ174.1[化学工程—陶瓷工业]