掺钾VO_2薄膜制备及热致相变特性研究  

Preparation of K Doped VO_2 Films and Its Thermochromic Properties

作　　者：宋林伟[1] 张玉波[1] 黄婉霞[1] 赵冬[1] 吴静[1] 罗蓉蓉[1] 徐元杰[1] 

机构地区：[1]四川大学,四川成都610064

出　　处：《稀有金属材料与工程》2013年第S2期335-338,共4页Rare Metal Materials and Engineering

基　　金：国家教育部回国人员科研启动基金

摘　　要：采用溶胶-凝胶法,以氟化钾和V2O5为前驱体高温共熔后水淬得到掺钾V2O5溶胶,然后在云母基底上制备掺钾VO2薄膜。采用SEM、XRD、XPS分析薄膜表面形貌和微观结构,利用FTIR检测薄膜在不同温度下的红外透过率,确定钾掺杂薄膜的相变温度及滞后温宽。结果表明,K进入VO2晶格替代部分V4+,在晶格中以K+的形式存在,掺杂后VO2薄膜相变温度明显降低,与未掺杂薄膜相比滞后温宽只有2℃,降低幅度较大。Mixture of potassium fluoride and vanadium pentaoxide powder was used as a precursor to prepare K doped VO2 films on the muscovite substrate by inorganic sol-gel method.SEM,XRD and XPS were employed to analyze the morphology and microstructure of the films FTIR was used to test the infrared transmittance of the samples at different temperatures and determine the transformation temperatures and hysteresis loop width of K doped VO2 films.The results suggest that the potassium existing in the VO2 films in the form of K+ is substituted for part of V atoms in the lattice.After doping K,the transition temperature of VO2 film changes appreciably.But the hysteresis loop width decreases significantly,which was only 2 ℃,compared with undoped films.

关 键 词：钾掺杂 VO2薄膜 滞后温宽 相变温度 

分 类 号：TB383.2[一般工业技术—材料科学与工程]