热处理温度对VO_2薄膜结构和相变性能的影响  

Effect of Annealing Temperature on Phase Transition Characteristics of VO_2 Thin Film

作　　者：张玉波[1,2] 黄婉霞[1] 宋林伟[1] 徐元杰[1] 赵冬[1] 吴静[1] 李丹霞[1] 

机构地区：[1]四川大学,四川成都610064 [2]四川工程职业技术学院,四川德阳618000

出　　处：《稀有金属材料与工程》2013年第S2期525-528,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助(61072036)

摘　　要：以H2O2和V2O5为前驱物,利用H2O2和V2O5特殊化学作用制备V溶胶,而后在云母基底上成膜,经不同热处理温度(450～570℃)退火还原得到VO2薄膜。利用SEM、XRD、XPS分析薄膜表面形貌和微观结构,利用FTIR检测薄膜在不同温度下红外透过率,确定薄膜的相变温度及滞后温宽。实验表明,双氧水法制备的VO2薄膜红外屏蔽效率高,且高温透过率仅为2%左右。热处理温度对VO2薄膜表面形貌、微观结构及相变特性均产生影响。510℃热处理退火可得到生长致密、粒径分布均匀、相变温度低、滞后温宽较小的VO2薄膜。The mixture of hydrogen peroxide and vanadium pentaoxide powder was used as a precursor to prepare V sol on the muscovite substrate.Then the V2O5 films were annealed to fabricate the VO2 films at different temperatures from 450 to 570℃ ℃.SEM,XRD,and XPS were employed to analyze the morphology and microstructure of the films; FTIR was used to test the infrared transmittance of the samples at different temperatures and to determine the transformation temperature and hysteresis loop width of the VO2 films.The results show that the VO2 films fabricated by the V sol have a high infrared transmittance switching efficiency in the metal-insulator transition,and the infrared transmittance at the high temperature is merely 2%.The morphology,microstructure and phase transition characteristics of the films are influenced by the annealing temperature.The VO2 films which have been annealed at 510 ℃exhibit the excellent thermochromic phase transition characteristics with the low phase transition temperature and the hysteresis width.

关 键 词：VO2薄膜 双氧水 退火温度 相变性能 

分 类 号：TB383.2[一般工业技术—材料科学与工程]