溅射温度对TaN薄膜应变敏感性能的影响  

Research about the Influence of Depositing Temperature on the Sensitive Properties of TaN Thin Film Strain Gauge

作　　者：李超[1] 周勇[1] 宋阳[1] 贺利军[1] 蒋书文[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《材料保护》2013年第S2期51-52,共2页Materials Protection

摘　　要：采用中频磁控溅射方法,在有绝缘层的金属基板上制备TaN薄膜应变计。并研究了溅射温度对TaN薄膜微结构、室温电阻率以及对薄膜TaN应变计的电阻温度系数(TCR)和应变敏感系数(GF)的影响。结果表明:溅射温度对TaN薄膜的微结构有显著影响;不同的溅射温度下,TaN会析出不同的晶相,不同晶相的TaN薄膜的电学性能和薄膜应变计的电阻温度系数都不相同;在400℃溅射温度下,N2分压为4%,溅射功率为200 W的条件下,制备的TaN薄膜应变计的TCR为50×10-6℃,GF为9,该薄膜应变计性能稳定,重复性好。Tantalum nitride thin film strain gauges were deposited on metal blade substrate with insulating layer by middle-frequency magnetron sputtering. The effects of depositing temperature on the microstructure and the resistivity of the TaN thin films,and on the TCR and GF of TaN strain gauges were studied. The results show that the depositing temperature is the key factor to influence the microstructure and the resistivity of TaN shin films,and the TCR and GF of the TaN strain gauge. Under the condition of the depositing temperature is400 ℃,N2 partial pressure is4%,sputtering power is200 W,the TaN strain gauge with the TCR of50 ×10-6/ ℃ and the GF of 9 was prepared,which has a good stable performance and a strong measurability.

关 键 词：TAN TCR GF 应变计 

分 类 号：TB383.2[一般工业技术—材料科学与工程]