用退火法重置自旋阀材料钉扎方向的研究  

Research of resetting the pinning direction in spin valve materials by annealing

作　　者：李健平[1,2] 钱正洪[1,2] 白茹[1] 孙宇澄[1,2] 

机构地区：[1]杭州电子科技大学磁电子中心,浙江杭州310018 [2]四川大学材料科学与工程学院,四川成都610065

出　　处：《材料保护》2013年第S2期83-85,共3页Materials Protection

基　　金：科技部973子课题(No.2011CBA00602);浙江省重大科技专项(No.2011C11047);浙江省教育厅"磁电子材料和器件"创新团队(No.2009[171]);浙江省科技厅创新团队(No.2010R50010)资助

摘　　要：用磁控溅射法制备了被钉扎层为CoFe/Ru/CoFe的IrMn基底钉扎自旋阀材料,制备过程中自由层与被钉扎层的生长磁保持不变,制备的自旋阀材料的巨磁电阻率为9.30%。在245℃的真空(<10-5Pa)环境下,对在相同条件下制备的自旋阀材料样品在恒定外加磁场下退火2 h,退火磁场方向与自由层易磁化轴垂直,退火磁场大小分别为1 kOe,3 kOe,5 kOe,7 kOe。用四探针法测试了退火后材料的磁电阻曲线。实验发现,当退火磁场为5 kOe时,自旋阀材料的钉扎方向完全转到与自由层易磁化轴垂直的方向,并且保持了退火前的的巨磁电阻率。当退火磁场增大为7 kOe时,退火后自旋阀材料的巨磁电阻率增大到10.19%。IrMn based spin valve material with CoFe/Ru/CoFe structure was fabricated by magnetron sputtering. During the preparation,the induced magnetic field for free layer and the pinned layer are in the same direction. The GMR ratio of the prepared spin valve material is 9.30%. Spin valve materials were annealed for2 hours with magnetic fields along the direction that perpendicular to the easy axis of free layer in vacuum environment( <10-5Pa) at245 ℃. And the magnetic fields are respectively1kOe,3kOe,5kOe,7kOe. The magneto-resistance ratio of the material is 9.30%. It is found that when the annealing field was5kOe the pinning direction of spin valve materials totally rotated to the direction that perpendicular to the easy axis of free layer without any loss of the magneto-resistance ratio. When the annealing field was increased to7kOe,the magneto-resistance ratio increased to10.19%.

关 键 词：CoFe/Ru/CoFe 自旋阀 退火 

分 类 号：TG156.2[金属学及工艺—热处理]