飞秒纳秒脉冲激光微构造和掺杂单晶硅(英文)  

Microstructuring and doping of monocrystalline silicon with femtosecond and nanosecond laser pulses

作　　者：温才[1] 李晓红[1] 贺小庆[2] 段晓峰[2] 邱荣[1] 刘德雄[1] 唐金龙[1] 胡思福[1,3] 

机构地区：[1]西南科技大学理学院极端条件物质特性联合实验室,四川绵阳621010 [2]中国科学院物理研究所北京凝聚态物理国家实验室,北京100190 [3]电子科技大学微电子与固体电子学院,成都610054

出　　处：《强激光与粒子束》2015年第2期228-234,共7页High Power Laser and Particle Beams

基　　金：supported by National Natural Science Foundation of China(11104226,11204250)

摘　　要：在SF6气氛下,分别利用钛宝石飞秒脉冲激光与掺钕钇铝石榴石纳秒脉冲激光对单晶硅表面进行了微构造和重掺杂,以用于光伏材料。对制备的单晶硅表面微结构的形貌、结晶性和硫元素杂质含量与分布进行了研究。实验结果表明纳秒脉冲激光制备的单晶硅表面微结构的薄层电阻较小,缺陷密度较低(结晶性高),硫元素杂质含量较高且在表面分布的范围较广,深度较大(约1μm)。此外,材料的可见-近红外波段吸收率可接近80%。基于纳秒脉冲激光微构造的单晶硅的优异性能,在样品表面制备了有效光照面积达8cm2的太阳能电池。其中,最佳太阳能电池的串联电阻、开路电压、短路电流密度分别为0.5Ω,503mV,35mA/cm2,转换效率约12%。上述太阳能电池性能还可通过优化制备工艺进一步提高。Monocrystalline silicon(c-Si)surfaces were microstructured and hyperdoped in SF6 atmosphere using femtosecond(fs)Ti:sapphire and nanosecond(ns)Nd:yttrium-aluminum-garnet laser pulses,respectively,for photovoltaic applications.The obtained microstructures were studied with respect to surface morphology,crystallinity,concentration and distribution of sulfur impurities.The experimental results indicate that the ns-laser microstructured silicon has a lower sheet resistance,a lower defect density(i.e.,higher crystallinity)and a higher concentration of sulfur impurities distribution over a larger surface area and depth(about 1μm).In addition,its absorbance can reach about 80%from the visible region to the near-infrared spectral region.With the better performance of ns-laser treated silicon,solar cells with an active area of 8cm2 were manufactured on the samples.The series resistance,open-circuit voltage,short-circuit current density,and conversion efficiency of the best solar cell are 0.5Ω,503 mV,35mA/cm2,and about 12%,respectively.And these can be further improved by manufacturing process optimization.

关 键 词：硅 飞秒脉冲激光 纳秒脉冲激光 微构造 掺杂 太阳能电池 

分 类 号：TN249[电子电信—物理电子学]