频率-电流扫描3ω法表征纳米薄膜界面热阻  

Characterization of Thermal Boundary Resistance of Nano Film Using Frequency-Current Sweeping 3ω Method

作　　者：王照亮[1] 孙铭蔓 姚贵策 梁金国[1] 

机构地区：[1]中国石油大学(华东)能源与动力工程系,青岛266580

出　　处：《工程热物理学报》2015年第4期861-864,共4页Journal of Engineering Thermophysics

基　　金：国家自然科学基金资助项目(No.51176205;No.U1262112)

摘　　要：纳米薄膜与基体之间的界面热输运是MEMS系统热管理和热设计的热点和难点。建立了频率扫描3ω法的热阻抗网络模型。利用频率-电流扫描3ω法和不同厚度薄膜试样得到单层纳米薄膜与基体之间的界面热阻。ZrO_2、SiO_2增透膜与基体之间的界面热阻分别为0.108 m^2·K·MW^(-1)和0.066 m^2·K·MW^(-1)。发现界面热阻与扫描频率无关,未发现界面热阻随膜厚变化的尺度效应。实验和理论分析表明,声子近界面效应在增透膜和基体界面的热输运过程中起主导作用。Thermal transport through the boundary between nano film and the substrate is the hot-spot and difficulty of thermal management and design in MEMS system.The model of thermal impedance net is estabhshed for frequency-sweeping 3ω method.The thermal boundary resistance between single layer nano film and substrate is experimentally determined for different depth samples by frequency-sweeping 3ω method.The thermal boundary resistance is 0.108 m^2·K·MW^(-1) and 0.066m^2·K·MW^(-1) respectively between ZrO_2,SiO_2 anti-films and the substrates.It shows that the thermal boundary resistance is free of sweeping frequency and has no scale effect with nano film depth.The experimental and theoretical analysis shows that the near-surface effect of phonon plays a key role in thermal transport through the boundary between nano film and the substrate.

关 键 词：纳米薄膜 界面热阻 频率扫描3ω法 电流扫描3ω法 声子近界面效应 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TB383.2