炭/炭复合材料制造硅晶体生长坩埚初探  

PRIMARY INVESTIGATION OF C/C COMPOSITE MEDE THE SINGLE CRYSTAL SILICON GROWTH CRUCIBLE PROCESS

作　　者：蒋建纯[1] 周九宁[1] 浦保健[1] 黄伯云[1] 

机构地区：[1]中南大学粉末冶金研究院粉末冶金国家重点实验室,长沙410083

出　　处：《炭素》2004年第2期3-7,共5页Carbon

摘　　要：多晶硅用直拉法(CZ)或磁场直拉法(MCZ)拉制成单晶硅棒。晶体生长炉热场零件中的石墨发热体、坩埚等在机械应力和热应力的综合作用下发生变形或损坏造成失效,更换频繁。选用纯度高的炭纤维制成待制件的多孔坯体,经过增密、纯化处理制成炭/炭复合材料坩埚。试制的两体12"炭/炭复合材料坩埚进行了工业性试验。炭/炭复合材料机械强度高、耐热冲击性能和化学稳定性好,其使用寿命大大高于高纯石墨坩埚。两体的连接止口的氧化侵蚀限制了坩埚的使用寿命。单晶硅设备的大型化、炭/炭复合材料势必成为晶体生长炉热场零件的必选材料。Silicon single crystals are produced mainly by Czochralski method (CZ) and magnetic field app-lied Czochralski method(MCZ).Hot zone graphite heated and crucibles are often invalidated under the thermal stesses and mechanical stresses and placed often.It is made the porous semi-finished goods of the prefabricat,and made C/C composite crucible selected in high purity carbon fibre by dense,purification treatment.C/C composite provides high mechanical strength,high resistance to temperature change,high chemical resistane by industrial test for 12'C/C composite crucibles of two parts trial-manufactured,its service life is higher than the high-purity graphite crucible.The service life of crucibles is limited by the joins erosion.C/C composite is well designable and more suitable for hot zone system parts of large apparatus for sillcon single crystal.The C/C composite may be the most important materials for the hot zong of the moldern crystal growth system in the future.

关 键 词：炭/炭复合材料 硅晶体生长坩埚 多晶硅用直拉法 CZ 磁场直拉法 MCZ 单晶硅 半导体 

分 类 号：TN304.12[电子电信—物理电子学] TB332[一般工业技术—材料科学与工程]