环境气压对脉冲激光烧蚀沉积纳米Si薄膜表面粗糙度的影响  

Influence of Inert Gas Pressure on the Surface Roughness ofSilicon Film Prepared by Pulsed Laser Deposition

作　　者：王英龙[1] 张荣梅[1] 傅广生[1] 彭英才[2] 孙运涛[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002 [2]河北大学电子信息工程学院,河北保定071002

出　　处：《中国激光》2004年第6期698-700,共3页Chinese Journal of Lasers

基　　金：河北省自然科学基金 (编号 :5 0 0 0 84;5 0 312 5 )资助项目

摘　　要：薄膜表面粗糙度是表征薄膜质量的重要指标 ,为了探求环境气压对脉冲激光烧蚀沉积纳米Si薄膜表面粗糙度的影响 ,采用XeCl脉冲准分子激光器 ,分别在惰性气体氦气和氩气的不同气压环境下烧蚀沉积了纳米Si薄膜 ,用TencorInstrumentsAlpha Step 2 0 0台阶仪对相应薄膜的表面粗糙度进行了测量。结果表明 ,薄膜表面粗糙度开始随着气压的增大而逐渐增加 ,在达到一最大值后便随着气压的增大而减小。由不同气体环境下的结果比较可以看出 ,充氩气所得Si薄膜表面粗糙度比充氦气的小 ,最大粗糙度强烈地依赖于气体种类。对于原子质量较大的氩气而言 ,其最大粗糙度仅比低气压时高出 11% ,而对于原子质量较小的氦气来说 ,其最大粗糙度比低气压时高出314 %。The surface roughness of Si film is an important parameter to describe its quality. In order to investigate the correlation between the surface roughness of silicon film prepared by pulsed laser deposition and gas pressure, by using Lambda Physik XeCl excimer laser, nanocrystalline silicon film is deposited in different inert gas atmospheres such as He and Ar, by using Tencor Instruments Alpha-Step 200, the surface roughness of the sample is measured. The results show that with increasing gas pressure, the roughness of Si film first increases and reaches its maximum and then decrease, furthermore, the numerical value in Ar is less than that in He. The roughness maximum strongly depends on the inert gases used. For the heavier gas, Ar, the maximum is 11% higher than that in the case of very-low pressure, for the gas He, the corresponding values are 314%.

关 键 词：薄膜物理学 Si纳米薄膜 脉冲激光烧蚀 表面粗糙度 

分 类 号：O484.1[理学—固体物理]