掺Sn的Ge_2Sb_2Te_5相变存储薄膜的光学性质  

Optical Properties of Sn-Doped Ge_2Sb_2Te_5 Phase Change Thin Films

作　　者：顾四朋[1] 侯立松[1] 赵启涛[1] 黄瑞安[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《光学学报》2004年第6期735-738,共4页Acta Optica Sinica

摘　　要：提高存储密度和存取速率一直是光存储发展的方向 ,这对目前用于可擦重写存储的相变材料提出了越来越多的要求 :它们既要对短波长有足够的响应 ,同时其相变速度也越快越好。因此 ,相变材料性能的改进十分重要 ,掺杂是提高相变材料性能的重要手段之一。用直流溅射法制备了掺杂不同量Sn的Ge2 Sb2 Te5相变薄膜 ,由热处理前后薄膜的X射线衍射 (XRD)发现 :薄膜发生了从非晶态到晶态的相变。研究了薄膜在 2 5 0～ 90 0nm区域的反射光谱和透射光谱。结果表明 :适当的Sn掺杂能大大增加热处理前后材料在短波长 (30 0～ 4 0 5nm)的反射率衬比度 ,可见 ,通过Sn掺杂改良相变材料的短波长光存储性能是一种有效的途径。To increase the storage density and the data rate is the definite trend of development of optical storage. In order to meet the higher and higher requirements for optical storage, it is very important to improve the performance of phase-change materials for rewritable optical storage. Doping of certain elements into the materials is one of the most effective ways for the purpose. In the present work, Sn-doped Ge 2Sb 2Te 5 thin films were prepared by RF-sputtering method. X-ray diffraction (XRD) patterns of the films with different Sn contents in the as-deposited and heat-treated states show that the films changed from amorphous to crystalline states due to heat-treatment and some Sn-Te phase appeared. The reflection and transmission spectra of the Sn-doped films before and after heat treatment were investigated in the region of 250～900 nm. The results show that the reflectivity contrast of the Ge 2Sb 2Te 5 films was increased considerably with Sn-doping. This suggests that proper Sn-doping is a useful way to improve the storage performance of Ge 2Sb 2Te 5 films, especially in the short wavelength region (300～405 nm).

关 键 词：锡掺杂 锗锑碲薄膜 光学性质 反射率衬比度 短波长光存储 直流溅射法 

分 类 号：O484.41[理学—固体物理]