高临界电流密度K_3C_(60)超导单晶薄膜的合成  

SYNTHESIS OF THE SINGLE CRYSTAL K_3C_(80) THIN FILMS WITH HIGH CRITICAL CURRENTS

作　　者：张晓东[1] 赵文兵[1] 叶志远[1] 张金龙[1] 李传义[1] 尹道乐[1] 顾镇南[2] 周锡煌[2] 金朝霞[2] 

机构地区：[1]北京大学物理系,北京100871 [2]北京大学化学系,北京100871

出　　处：《低温物理学报》1993年第4期265-267,共3页Low Temperature Physical Letters

摘　　要：我们在云母(001)面上合成高质量的K_3C_(?)单晶薄膜。在正常态下它表现出金属性的电阻一温度的依赖关系,且符合关系式p(T)=a+bT^2。单晶薄膜在22K附近具有很陡的超导转变,转变宽度(电阻值由90％到10％)小于700mK,零电阻温度为21K,连续直流测量出的临界电流密度高达50000A/cm^2。We have synthesized high-quality single crystle K3C60 thin films on (001) mica substrates. The normal state shows a classical metallic dependence of R-T and it can be fit to the form of p (T)=a+bT2, where R is the electrical resistivity and T is the temperature. The film has a sharp transition to superconductivity near 22K, with a 10% to 90% width less than 700mK. The critical current density measured by continous dc current is as high as 50000A/cm2, thus shed a light on the potential practical use of this unique material, and the preliminary analysis indicate that Jcis proportional to 1- (T/Tc)3.

关 键 词：单晶 薄膜 超导性 临界电流密度 

分 类 号：O511.1[理学—低温物理]