简易高T_c超导YBaCuO薄膜桥结  

Simple High Tc YBaCuO Thin Film Bridge Type Junctions

作　　者：戴建国[1] 李元[1] 杨森祖[1] 高燕 郭大元[1] 钱珉 

机构地区：[1]南京大学信息物理系

出　　处：《低温与超导》1993年第3期37-41,共5页Cryogenics and Superconductivity

摘　　要：在ZrO_2.基片上采用DC磁控溅射原位生长得到高Tc超导YBaCuO薄膜,我们通过刻蚀这种薄膜简易地制得薄膜Josephson桥结,其临界温度Tc为83K～90K,在液氮温度下,临界电流Ic与正常态电阻R_N之间的乘积IcR_N为0.2mV～1.6mV不等.一般能观测到8mm微波感应台阶,部分微桥还观测到了多个3mm微波感应台阶. 我们测试了结的Ic与温度T的经验关系,对论了薄膜Jc、微桥尺寸等因素对桥结I—V特性的影响情况。Using YBaCuO thin films,which grown on ZrO2 (100) by facing targets and off-axis DC magnetron sputtering in situ,bridge type Josephson junctions are fabricated easily.These junctions exhibit zero resistance at 83K to 90K,and the IcRN product of 0.2mV to 1.6mV at 78 K where Ic and RN are the critical current and the normal resistance respectively.In most of these junct ion samples,sharp microwave induced steps can be observed at 78K for 36.5 GHz or 90GHz irradiation.The relation Ic [1-T/Tc] N,N6[2,3] was proved by our experiments.

关 键 词：超导薄膜 薄膜 桥结 磁控溅射 高温 

分 类 号：TM263.051[一般工业技术—材料科学与工程]