8～12μm超晶格量子阱红外探测材料与器件的新进展  

Recent Progress in Superlattice Materials and 8～12μm Quantum Well Infrared Detectors

作　　者：陈世达 

机构地区：[1]华北光电研究所,北京100015

出　　处：《红外技术》1993年第2期1-5,共5页Infrared Technology

摘　　要：超晶格材料与量子阱器件的发展提供了一条实现8～12μm红外探测的新途径,作者曾介绍过GaAs-GaAlAs n型光导多量子阱红外探测器、InAsSb和InAs-Ga_(1-x)In_xSb应变超晶格材料和器件及HgTe-CdTe超晶格材料,本文将补充GaAs-GaAlAs p型光导多量子阱和光伏(或称Kastalsky)型红外探测器;以GaAs或InGaAs为基极的红外热电子晶体管(IHET);Ga_(1-x)Al_xSb-AlSb超晶格材料和Ge_xSi_(1-x)-Si量子阱材料与内光电子发射红外探测器。这些都是目前研制长波红外材料与器件的热点。The development of superlattice materials and quantum well devices provide a new way for making 8～12 μm infrared detectors. P-doped GaAs-GaAlAs multi-quantum well detector, PV-type GaAs-GaAlAs superlattice, GaAs or InGaAs based infrared hot-electron transistor (IHET), Ga_(1_x)Al_xSb-AlSb superlattices, p-type Ge_xSi_(1-x)-Si multi-quantum well and Ge_xSi_(1-x)-Si heterojunction internal photoemission infrared detector have been developed. In this paper, the latest status of these materials and detectors are introduced.

关 键 词：超晶格红外探测材料 量子阱器件 长波红外探测器 红外热电子晶体管 

分 类 号：TN21[电子电信—物理电子学]