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作 者:杨海峰[1] 曹晓卫[1] 李霞[1] 王桂华[1] 章宗穰[1]
机构地区:[1]上海师范大学化学系
出 处:《光散射学报》2004年第2期116-121,共6页The Journal of Light Scattering
摘 要:应用原位共焦拉曼光谱技术在经表面增强处理后的金电极上,观察Cu,Zn-SOD分子的吸附方式及其随电位变化的过程。实验结果表明,在400mV-700mV的电位区间内,Cu,Zn-SOD分子始终以氨基酸残基上COO-和NH2在电极表面吸附,使活性中心所处的平面远离电极表面,且随电位负移发生脱附。上述结果为解释SOD分子在金电极表面无法实现快速电子传递提供了直接依据。Adsorption of Cu,Zn -Superoxide Dismutase (Cu,Zn-SOD) on the pretreated gold electrode has been studied by in-situ Raman spectroelectrochemical method. It was observed that. Cu,Zn-SOD molecules were adsorbed onto the surface of gold electrode via COO^- group and NH_2 at the potential region from 400 mV to 700 mV, but desorbed from the electrode surface with negative shift of potential. It leads to, eventually, the active central planar of Cu,Zn-SOD departing from surface of electrode.In-situ SER spectra render a direct evidence for explanation of slow electron transfer process of SOD on gold electrode.
关 键 词:超氧化物歧化酶(SOD) 表面增强拉曼光谱 光谱电化学 金电极
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