Simulation methods of ion sheath dynamics in plasma source ion implantation  

作　　者：WANGJiuli ZHANGGuling WANGYounian LIUYuanfu LIUChizi YANGSize 

机构地区：[1]InstituteofPhysics,ChineseAcademyofSciences,Beijing100080,China [2]StateKeyLaboratoryofMaterialsModificationbyLaser,Ion,andElectronBeams,Dalian116023,China

出　　处：《Chinese Science Bulletin》2004年第8期757-765,共9页

摘　　要：Progress of the theoretical studies on the ion sheath dynamics in plasma source ion implantation (PSII) is reviewed in this paper. Several models for simulating the ion sheath dynamics in PSII are provided. The main problem of nonuniform ion implantation on the target in PSII is dis-cussed by analyzing some calculated results. In addition, based on the relative researches in our laboratory, some cal-culated results of the ion sheath dynamics in PSII for inner surface modification of a cylindrical bore are presented. Fi-nally, new ideas and tendency for future researches on ion sheath dynamics in PSII are proposed.Progress of the theoretical studies on the ion sheath dynamics in plasma source ion implantation (PSII) is reviewed in this paper. Several models for simulating the ion sheath dynamics in PSII are provided. The main problem of nonuniform ion implantation on the target in PSII is dis-cussed by analyzing some calculated results. In addition, based on the relative researches in our laboratory, some cal-culated results of the ion sheath dynamics in PSII for inner surface modification of a cylindrical bore are presented. Fi-nally, new ideas and tendency for future researches on ion sheath dynamics in PSII are proposed.

关 键 词：等离子鞘模拟 内表面等离子源离子注入 液体模型 粒子模拟 PSII 表面改性 

分 类 号：TG174.444[金属学及工艺—金属表面处理]