半导体可饱和吸收镜失效分析及改进方法研究  

Analysis about the invalidation and improvement researchof semiconductor saturable absorption mirror

作　　者：王勇刚[1] 马骁宇[1] 冯健[1] 李伟[1] 李照银[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《红外与激光工程》2004年第3期256-259,共4页Infrared and Laser Engineering

摘　　要：介绍了半导体可饱和吸收镜的锁模原理和制作方法,通过分析超短脉冲激光与半导体材料作用原理,阐述了提高半导体可饱和吸收镜抗激光损伤阈值的方法,如吸收区掺杂、退火、扩大低温生长区、表面热沉等。实验中通过退火和镀介质薄膜使半导体可饱和吸收镜由不能工作转为能够工作,并且获得稳定的连续锁模脉冲激光输出。The modelocking principle and the manufacture method of semiconductor saturable absorption mirror are introduced. By analyzing the behavior that ultrashort pulse acts on semiconductor material, some methods to increase the anti-damage threshold are put forward, such as doping in absorption layer, annealing, widening the area grown at low temperature, surface heat sink and so on. In experiment, several semiconductor saturable absorption mirrors could work and obtain stable passive modelocking pulse output after annealing and being coated with dielectric film.

关 键 词：超短脉冲激光 半导体可饱和吸收镜 损伤 

分 类 号：TN24[电子电信—物理电子学]