CO_2激光辐照下光学薄膜的温度场与热畸变  

Temperature field distribution and thermal distortion of thin film coatings irradiated by CO_2 laser

作　　者：杨富[1] 黄伟[1] 张彬[1] 楚晓亮[1] 刘志国[2] 蔡邦维[1] 

机构地区：[1]四川大学电子信息学院 [2]中国科学院光电技术研究所,双流610209

出　　处：《激光技术》2004年第3期255-258,共4页Laser Technology

摘　　要：介绍了光学薄膜温度场的基本理论 ,利用交替隐型技术 ,对 10 .6 μm激光辐照下介质薄膜的温度场分布进行了数值模拟和理论分析。在此基础上 ,利用夏克 哈特曼波前传感器对介质基底样品、不同厚度的介质单层膜样品以及不同膜系的YbF3 /ZnSe介质多层膜样品在 10 .6 μmCO2 激光辐照下的热畸变进行了实验研究。研究结果表明 ,激光辐照下光学薄膜样品的温度场分布与辐照激光的光场分布、激光功率以及激光的辐照时间等因素有关。对于 10 .6 μm激光而言 ,Ge最适宜做基底材料。The basic theory of the temperature field of optical thin films is given.The temperature field distribution of dielectric thin films irradiated by 10.6μm CO 2 lasers has been simulated numerically and analyzed theoretically using alternating direction-implicit technique.Using the Shack-Hartmann wavefront sensor,the thermal distortion of the substrate,the single-layer dielectric thin films with different thickness,and the multi-layer dielectric thin films with different multilayer thin films(YbF 3/ ZnSe)irradiated by CO 2 laser are studied experimentally.It can be shown that the temperature field distribution of thin film coatings irradiated by lasers deperds on the field distribution,power and irradiating time of lasers.For the 10.6μm laser,Ge is the most suitable substrate material.

关 键 词：光学薄膜 温度场 热畸变 10.6μm激光 

分 类 号：O432.2[机械工程—光学工程] O484[理学—光学]