熔盐电沉积硅的基础研究  

The Study on Foundation of Electrodeposited Silicon in Fused Salts

作　　者：李运刚 蔡宗英[1] 唐国章[1] 梁精龙[1] 

机构地区：[1]河北理工学院冶金工程系

出　　处：《有色金属（冶炼部分）》2004年第3期23-26,共4页Nonferrous Metals（Extractive Metallurgy)

基　　金：河北省自然科学基金资助项目(项目号502263)

摘　　要：　在FLINAK-Na2SiF6熔盐体系中,以Pt为参比电极、硅钢片为工作电极、石墨为辅助电极,在750℃下,用循环伏安法和计时电位法对Si4+的电化学反应机理和扩散系数进行了研究。结果表明:该熔盐体系进行电沉积硅是可行的,该体系中硅离子的还原为扩散控制的可逆电极过程,且产物不可溶;整个还原过程为Si4++4e→Si0;该熔盐体系中阴极电位不应负于-2V,否则会有Na沉积出来,从而影响沉积层质量;Si4+的扩散系数为:D=5 42×10-11m2/s(C=2 58×103mol/m3)。The electrochemical reaction mechanism and diffusion coefficient of Si^(4+) are studied in FLINAK- Na2SiF6 system by Cyclic Voltammetry and Chronopotentionmetry at 750℃. Pt, silicon sheet and graphite are respectively reference electrode, working electrode and auxiliary electrode. The results indicate that electrodeposited silicon is viable in this fused salt system. The electrochemical reaction of Si^(4+) is reversible electrode process by diffusion controlling and the production cannot be dissolved; The whole electrochemical reaction process is Si^(4+) + 4e →Si^0, The electric potential of cathode shouldn't be less than -2V, or Na will be deposited out and affect the quality of deposit. Diffusion coefficient of Si^(4+) is 5.42×10^(-11)m^2/s.

关 键 词：硅 电沉积硅 熔盐 循环伏安 计时电位法 

分 类 号：TF803.27[冶金工程—有色金属冶金]