高功率宽带掺铒超荧光光源  

High-power broadband erbium-doped superfluorescent fiber source

作　　者：郭小东[1] 乔学光[1] 贾振安[1] 王小凤[1] 

机构地区：[1]西安石油大学光纤传感实验室,陕西西安710065

出　　处：《光电工程》2004年第9期18-21,共4页Opto-Electronic Engineering

基　　金：国家高技术863研究发展计划项目(2002AA313150);国家自然科学基金项目(69877025);国家教育部科学技术重点项目(02190);陕西省科技攻关项目(2003K015J-28)

摘　　要：采用单程后向结构,通过优化掺铒光纤的长度及抽运功率等参量,并尽量提高熔接效率,实现了一种功率达28.58mW(14.56dBm)的高功率宽带光源,在1525-1565nm之间功率高达27.34mW(14.37dBm)。在未加任何滤波器的情况下,其3dB带宽为31.2nm。对一根光纤中前向与后向光光谱特点进行分析比较。结果表明,用一段光纤和一只二极管可实现C+L波段的宽带高功率光源,结构紧凑,成本低。With one path back ward structure, a broadband erbium-doped superfluorescent fiber source with high-power of 28.58mW(14.56dBm)was developed and obtained, through optimizing the parameter of the erbium-doped fiber,the LD pumping power and the welding efficiency. The linewidth of 31.2 nm with a power ripple of 3dB was obtained without using any external spectral filters, the power between 1525nm and 1565nm is up to 27.34mW(14.37dBm).A comparison for character of amplified spontaneous emission of forward and backward within one fiber is carried out. The result shows that amplified spontaneous emission of C+L band with high power can be made with one fiber and a diode.The system is smaller and the low cost.

关 键 词：掺铒光纤 超荧光光纤光源 宽带光源 放大的自发辐射 

分 类 号：TN253[电子电信—物理电子学]