溶剂热条件下单质直接反应合成GaP纳米晶  

Synthesis of GaP nanocrystals by elemental reactions under solvothermal conditions

作　　者：信春雨[1] 刘振刚[2] 于美燕[2] 李凯[3] 盖利刚[2] 王琪珑 

机构地区：[1]山东大学研究生院 [2]山东大学化学与化工学院 [3]山东大学晶体材料国家重点实验室 [4]山东大学化学与化工学院,山东济南250100

出　　处：《微纳电子技术》2004年第7期20-22,共3页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(90206042);山东省科技厅项目(2001-2004)

摘　　要：在苯热条件下,以金属镓和白磷为原料直接反应合成了GaP纳米晶,并研究了反应温度对GaP纳米晶物相的影响。微观形貌观测结果则表明,在400℃合成的GaP纳米晶体粒度均匀,而且团聚现象较少。当温度为300℃时,GaP纳米晶的结晶质量较差,而当温度升高到500℃时,GaP纳米晶的结晶完整性得到改善,但是颗粒团聚现象变得比较严重。GaP nanocrystals have been prepared by reacting Ga and P under benzene-thermal conditions,the effect of temperature on the crystalline perfect of GaP nanocrystals has also been investigated. The observation of the morphologies of the samples revealed that,GaP nanocrystals prepared at 400 ℃ are uniform in particles'size. On the other hand,when the reaction temperature was 300 ℃,the crystalline perfectness of GaP nanocrystals were rather poor,and some Ga and P remained un-reacted. When the reaction temperature increased to 500 ℃,GaP nanocrystals with quite high perfectness can be obtained.

关 键 词：GaP纳米晶 溶剂热合成 微观形貌 

分 类 号：TB383[一般工业技术—材料科学与工程]