卤化银微晶中光电子衰减谱的特性  

The Characteristic of Photoelectron Decay Spectra in Silver HalideMicrocrystals

作　　者：李晓苇[1] 韩理[1] 耿爱丛[1] 杨少鹏[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《光谱学与光谱分析》2004年第7期787-789,共3页Spectroscopy and Spectral Analysis

基　　金：教育部科技研究重点项目 (0 1 0 1 1 );河北省自然科学基金项目 (1 991 0 4 )资助

摘　　要：光电子在卤化银材料潜影形成过程中发挥着重要的作用 ,光电子衰减行为在很大程度上决定于卤化银的晶体结构。采用光学与微波双共振技术 ,测量了自由光电子和浅俘获光电子的衰减谱 ,得到了卤化银中电子陷阱的密度和深度分布。以自由光电子寿命为纽带 ,通过分析掺杂卤化银晶体中电子陷阱的分布情况 ,可以确定浅电子陷阱掺杂剂的最佳掺杂浓度。Photoelectrons plays an important role in the latent image formation process of silver halide materials, and the decay characteristic of photoelectrons are dependent on the structure of silver halide microcrystals to a great extent. In this paper, the decay spectra of free photoelectrons and shallow-trapped electrons were obtained by optics and microwave double resonance technology. The depth and density of electron traps in silver halide microcrystals were discussed. Moreover, using the lifetime of free photoelectrons, the optimal doping amount of shallow electron trap dopants was found by analyzing the distribution condition of electron traps in silver halide.

关 键 词：卤化银微晶 光电子衰减谱 晶体结构 电子陷阱 自由光电子 浅俘获电子 

分 类 号：O614.122[理学—无机化学]