FTIR原位研究PCL薄膜的结晶过程  

In-Situ Study on the Crystallizationof PCL Films Using FTIR

作　　者：孔祥明[1] 何书刚[1] 汪昆华[1] 谢续明[1] 

机构地区：[1]清华大学化工系高分子研究所

出　　处：《光谱学与光谱分析》2004年第7期806-809,共4页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金 (2 0 1 740 2 2;90 1 0 30 35)资助项目

摘　　要：利用带热台的傅里叶变换红外光谱仪 (FTIR) ,原位跟踪了聚ε 己内酯 (PCL)在硅基片及KBr单晶基片上的结晶和熔融过程。发现在结晶过程中 ,由于结晶后分子间的自由体积缩小 ,分子间相互作用增强而导致了CO峰位的漂移及C—O—C ,C—H结晶峰的出现。并通过结晶峰与非晶峰对比计算出了相对结晶度。对不同浓度的PCL/THF溶液成膜的FTIR测试表明 ,薄膜厚度越小 ,结晶度越低。这可能是由于基板及几何维数的限制导致。另外发现 ,相同条件下 ,PCL在KBr基板上成膜后的结晶度要大于在硅片上成膜的结晶度。The crystalline behaviors of PCL(poly(epsilon-caprolactone)) thin film on Si and KBr substrates have been studied in-situ using FTIR with a heat stage. In the crystalline process, due to the decrease in free volume and the increase in interaction among different molecules, the peak of C=O shifted to lower wave number and the crystalline peak of C-O-C and C-H appeared. The degree of crystallinity has been calculated through the comparison between the peaks of crystal and amorphous parts. FTIR study on the films cast from solution with different concentrations showed that the thicker the film is, the higher crystallinity it has. This may be due to the substrate effect or geometric confinement. It was also shown that under the same preparation condition, the film on KBr wafer had higher degree of crystallinity than that of film on Si wafer.

关 键 词：PCL薄膜 结晶过程 FTIR原位 傅里叶变换红外光谱仪 薄膜厚度 

分 类 号：O631[理学—高分子化学]