铊(Ⅰ)离子电化学传感器的研究 1.光聚合铊离子敏感膜电极  

On Thallous Ion Electrochemical Sensor Ⅰ.Photopolymerized Sensitive Membrane Electrode of Thallous Ion

作　　者：吴国梁[1] 王凤琴[1] 沈彩娣 钱国英[1] 谭干祖[2] 焦天权[2] 邹子亚[3] 

机构地区：[1]中国科学院青海盐湖研究所,西宁810008 [2]中国科学院兰州化学物理研究所 [3]中国科学院电子学研究所

出　　处：《分析化学》1993年第4期392-395,共4页Chinese Journal of Analytical Chemistry

基　　金：国家自然科学基金

摘　　要：以合成的二种含16-冠-5衍生物的肉桂酸酯分别制得光聚合敏感膜涂铜棒和PVC膜铊(1)离子电极。涂铜棒电极对Tl^+的响应线性范围为3×10^(-5)～1×10^(-2)mol/L,斜率为48mV/pTl^+,选择系数K_(Tl)_+^(pot),k^+=0.12比之相应的PVC膜电极有较长的寿命。The sensitive membrane electrode of thallous ion based on the photopolymerization of cinnamic, esters containing derivatives of 16-crown-5 synthesized in our laboratory was prepared. The Tl+-electrode with the sensitive membrane at the end of copper rod sleeved by PVC tube exhibited responses in the range of 3× 10-5-1 × 10-2mol/L for TINO, with the slope of 48 mV/pTl+ and selectivity coefficient KTipot+,K+ of 0.12 , and its lifetime is longer than that of the corresponding PVC membrane electrode.

关 键 词：光聚合敏感膜 铊 离子选择电极 

分 类 号：O614.373[理学—无机化学]