光电双向负阻晶体管的数值模拟与实验研究  

Numerical Simulation and Experimental Study of Photo-Bidirectional Negative Resistance Transistor

作　　者：莫太山[1] 张世林[1] 郭维廉[1] 梁惠来[1] 毛陆虹[1] 郑云光[1] 

机构地区：[1]天津大学电子信息工程学院微电子系,天津300072

出　　处：《电子学报》2004年第8期1260-1263,共4页Acta Electronica Sinica

基　　金：国家重点基础研究发展规化项目 (No .2 0 0 2CB31 1 90 5)

摘　　要：光电双向负阻晶体管 (PBNRT)是一种新型S型光电负阻器件 .本文对它的光电负阻特性进行了数值模拟和实验研究 ,给出了器件等效电路 .PBNRT在光电混合工作模式下具有光控电流开关效应 ,可通过光照和控制电压两种控制方式改变器件的S型负阻特性 .模拟和实验结果均表明 :光照强度增大 ,维持电压基本保持不变 ,转折电压减小 ,负阻电压摆幅减小 ;而增大控制电压 ,维持电压和转折电压均增大 ,输出负阻特性曲线右移 .上述特点使得PBNRT可望在光电开关、光控振荡和光电探测等方面有很好的应用前景 .The photo-bidirectional negative resistance transistor (PBNRT) is a novel S type photoelectric negative resistance device. Its photoelectric negative resistance characteristics were investigated both by experiment and numerical simulation and its equivalent circuit is proposed. PBNRT has photo-controlled current switching effect in the optical and electric mixed operating mode, and its S negative resistance characteristics can be modulated by two different controlled ways, using light and controlled voltage respectively. The simulated and experimental results both indicate that on increasing optical intensity, sustaining voltage almost remains unchanged and snapback voltage decreases, thus reducing the negative resistance voltage range; while as controlled voltage increases, sustaining voltage and snapback voltage both increase accordingly, and output negative resistance characteristic curve shifts right. All the properties mentioned above make it suitable for photoelectric switching, photo-controlled oscillation and photoelectric detector.

关 键 词：光电双向负阻晶体管 S型光电负阻 光控电流开关 数值模拟 

分 类 号：TN364.3[电子电信—物理电子学]